Ferroelectric register, and method for manufacturing capacitor of the same

ABSTRACT

The present invention discloses a ferroelectric register and a method for manufacturing a capacitor of the same. The ferroelectric register is configured to reduce probability of data storage failure due to a weak state capacitor, by connecting a plurality of capacitors in parallel in a ferroelectric capacitor unit for storing data, instead of using a single capacitor, thereby improving storage reliability and stability. In addition, the ferroelectric register obtains a data sensing margin by pumping a cell plate signal into not a power voltage level but a pumping voltage level.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a ferroelectric register, and moreparticularly to a ferroelectric register configured to reduceprobability of data storage failure by connecting a plurality offerroelectric capacitors in parallel, thereby improving data storagereliability and stability.

2. Description of the Background Art

In general, a ferroelectric random access memory (FeRAM) has a dataprocessing speed equivalent to a dynamic random access memory (DRAM),and preserves data even when power is off.

The FeRAM is a memory having a similar structure to the DRAM. The FeRAMemploys a ferroelectric substance to form capacitors, and thus uses highremanent polarization which is a property of the ferroelectricsubstance. Even if electric fields are removed, data are not deleted inthe FeRAM due to the remanent polarization.

FIG. 1 is a hysteresis loop provided to explain properties of a generalferroelectric capacitor.

Referring to FIG. 1, although electric fields are removed in electricfield induced polarizations, the ferroelectric capacitor maintains apredetermined amount (A and D) of remanent polarizations (or spontaneouspolarizations).

An FeRAM cell introduces the states (D and A) of the remanentpolarization to data ‘1’and ‘0’, respectively, and applies them tomemory elements.

FIG. 2 is a diagram illustrating a unit cell of the general FeRAM.

As illustrated in FIG. 2, a bit line BL is formed in one direction, anda word line WL is formed in the direction crossing the bit line BL. Aplate line PL is formed in parallel to the word line WL at apredetermined interval. An NMOS transistor has its gate terminalconnected to the word line WL, and its source terminal connected to thebit line BL. A ferroelectric capacitor FC has its first terminalconnected to the drain terminal of the NMOS transistor, and its secondterminal connected to the plate line PL.

In the normal state, the ferroelectric capacitor FC has hysteresisproperties of loop A of FIG. 3, but in the weak state, the ferroelectriccapacitor FC has deformed properties of loop B of FIG. 3. Therefore, theweak state remanent polarization is much smaller than the normal stateremanent polarization.

If the weak state ferroelectric capacitor is used, the remanentpolarization thereof is so small that a register may not storenonvolatile data in a power-up mode.

SUMMARY OF THE INVENTION

The present invention is achieved to solve the above problems.Accordingly, it is an object of the present invention to store data morereliably, by improving the structure of ferroelectric capacitors forstoring data in a register using the ferroelectric capacitors.

In order to achieve the above-described object of the invention, aferroelectric register comprises a pull-up switch, a pull-up drivingunit, a write enable control unit, a ferroelectric capacitor unit, apull-down switch and a pull-down driving unit. The pull-up switchoutputs a power voltage when a pull-up enable signal is activated. Thepull-up driving unit receives the output voltage from the pull-upswitch, and pulls up a voltage of a data storage node for storing adifferential data to the power voltage. The write enable control unittransmits the differential data to the data storage node according to awrite control signal. The ferroelectric capacitor unit, which includesat least two ferroelectric capacitors connected in parallel between thedata storage node and a plate line, stores the differential data when acell plate signal is activated. The pull-down switch transmits a groundvoltage to the data storage node when a pull-down enable signal isactivated. The pull-down driving unit receives the ground voltage fromthe pull-down switch, and pulls down the voltage of the data storagenode to the ground voltage.

According to one aspect of the invention, a method for manufacturing acapacitor of a ferroelectric register includes: a first process forforming at least two bottom electrode layers commonly connected to anoutput terminal of the register; a second process for forming aferroelectric layer commonly corresponding to at least two bottomelectrode layers on the two bottom electrode layers; and a third processfor forming a top metal layer receiving a cell plate signal and commonlycorresponding to at least two bottom electrode layers on theferroelectric layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become better understood with reference tothe accompanying drawings which are given only by way of illustrationand thus are not limitative of the present invention, wherein:

FIG. 1 is a hysteresis loop showing properties of a generalferroelectric capacitor;

FIG. 2 is a diagram illustrating a unit cell of a general FeRAM;

FIG. 3 is a diagram showing properties of the ferroelectric capacitor inthe normal and weak states;

FIG. 4 is a detailed circuit diagram illustrating a ferroelectricregister in accordance with the present invention;

FIGS. 5 to 8 are detailed structure diagrams respectively illustratingcapacitor units of a ferroelectric capacitor unit in accordance with afirst embodiment of the present invention;

FIG. 9 is an operational timing diagram in a power-up mode of theferroelectric register in accordance with the present invention;

FIG. 10 is an operational timing diagram for setting a new data in theregister in a program write operation in accordance with the presentinvention;

FIGS. 11 to 14 are detailed structure diagrams respectively illustratingcapacitor units of a ferroelectric capacitor unit in accordance with asecond embodiment of the present invention;

FIGS. 15 a and 15 b are diagrams illustrating four ferroelectriccapacitors connected in parallel in a stack type;

FIG. 16 is a structure diagram illustrating a capacitor unit inaccordance with a third embodiment of the present invention;

FIG. 17 is a circuit diagram illustrating a cell plate voltage controlunit in accordance with the present invention;

FIG. 18 is a waveform diagram provided to explain an operation of thecell plate voltage control unit; and

FIGS. 19 and 20 are timing diagrams in the power-up mode and the programwrite operation of the register in accordance with the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments of the present invention will be described indetail with reference to the accompanying drawings.

FIG. 4 is a detailed circuit diagram illustrating a ferroelectricregister in accordance with the present invention.

The ferroelectric register includes a pull-up switch P1, a pull-updriving unit 410, a write enable control unit 420, a ferroelectriccapacitor unit 430, a pull-down driving unit 440 and a pull-down switchN5.

The pull-up switch P1 outputs a power voltage VCC to the pull-up drivingunit 410 when a pull-up enable signal ENP is activated. The pull-upswitch P1 is connected between the power voltage terminal VCC and thepull-up driving unit 410, and has its gate terminal connected to receivethe pull-up enable signal ENP.

The pull-up driving unit 410 receives the power voltage VCC from thepull-up switch P1, and pulls up voltages of data storage nodes CN1 andCN2 to the power voltage VCC.

The pull-up driving unit 410 is positioned between the pull-up switch P1and the write enable control unit 420, and includes PMOS transistors P2and P3 connected in a latch structure between the nodes CN1 and CN2.

The write enable control unit 420 receives differential data D and /Daccording to a write enable signal ENW. The write enable control unit420 includes NMOS transistors N1 and N2 which are respectively connectedbetween the data input terminals and the nodes CN1 and CN2, and whichhave their gate terminals commonly connected to receive the writecontrol signal ENW.

The ferroelectric capacitor unit 430 stores the data D and /D from thewrite enable control unit 420 by generating a voltage difference betweenthe nodes CN1 and CN2 in response to a cell plate signal CPL.

The ferroelectric capacitor unit 430 includes a plurality of capacitorunits FC1˜FC4 formed by connecting at least two ferroelectric capacitorsin parallel. In accordance with the present invention, the ferroelectriccapacitor unit 430 is formed by connecting at least two ferroelectriccapacitors in parallel, and a data ‘0’ or ‘1’ is sensed by using averageremanent polarization of the ferroelectric capacitors connected inparallel. Therefore, even if any one of the ferroelectric capacitors ofthe capacitor units FC1˜FC4 has a weak state, it can be compensated bythe other normal state ferroelectric capacitor. Accordingly, the averageremanent polarization of the capacitor units FC1˜FC4 exists within thenormal state data sensing margin range.

The structure of the capacitor units FC1˜FC4 will now be explained.

In the capacitor unit FC1, the ferroelectric capacitors {circle around(1)} and {circle around (2)} connected in parallel have their one sideends commonly connected to the node CN1, and their other side endsconnected to receive the cell plate signal CPL. In the capacitor unitFC2, the ferroelectric capacitors {circle around (3)} and {circle around(4)} connected in parallel have their one side ends commonly connectedto the node CN2, and their other side ends connected to receive the cellplate signal CPL.

In the capacitor unit FC3, the plurality of ferroelectric capacitors{circle around (5)} and {circle around (6)} are connected in parallelbetween the node CN1 and a ground voltage terminal VSS. In the capacitorunit FC4, the plurality of ferroelectric capacitors {circle around (7)}and {circle around (8)} connected in parallel between the node CN2 andthe ground voltage terminal VSS.

The pull-down driving unit 440 is connected in a latch structure betweenthe nodes CN1 and CN2, for pulling down the voltages of the nodes CN1and CN2 to the ground voltage VSS from the pull-down switch N5. Thepull-down driving unit 440 is positioned between the ferroelectriccapacitor unit 430 and the pull-down switch N5, and includes NMOStransistors N3 and N4 connected in a latch structure between the nodesCN1 and CN2.

The pull-down switch N5 transmits the ground voltage VSS to thepull-down driving unit 440 when a pull-down enable signal ENN isactivated. The pull-down switch N5 is connected between the pull-downdriving unit 440 and the ground voltage terminal VSS, and has its gateterminal connected to receive the pull-down enable signal ENN.

In addition, the ferroelectric register outputs the stored data throughoutput terminals B and /B.

FIGS. 5 to 8 are detailed structure diagrams respectively illustratingthe capacitor units FC1˜FC4 of the ferroelectric capacitor unit 430 inaccordance with a first embodiment of the present invention.

FIGS. 5 to 8 illustrate the plurality of ferroelectric capacitorsconnected in parallel side by side.

FIG. 5 shows the capacitor unit FC1. Two bottom electrode layerscorresponding respectively to the two capacitors {circle around (1)} and{circle around (2)} connected in parallel are formed, and oneferroelectric layer commonly corresponding to the two bottom electrodelayers is formed on the bottom electrode layers. Thereafter, a cellplate electrode layer (or metal electrode layer connected to the cellplate electrode layer) is formed on the ferroelectric layer as a topelectrode layer of the ferroelectric capacitors {circle around (1)} and{circle around (2)}. The two bottom electrode layers are electricallyconnected to the output terminal /B of the register.

A capacitor unit can be formed in the same manner by connecting at leastthree ferroelectric capacitors in parallel.

FIG. 6 illustrates the capacitor unit FC2 in accordance with the firstembodiment of the present invention. The capacitor unit FC2 has the samestructure and formation method as the capacitor unit FC1 of FIG. 5.FIGS. 7 and 8 show the capacitor units FC3 and FC4 in accordance withthe first embodiment of the present invention. Here, a top electrodelayer is not connected to a cell plate electrode layer but connected toa ground voltage terminal VSS (or load power).

FIG. 9 is an operational timing diagram in a power-up mode of theferroelectric register in accordance with the present invention.

When the power voltage VCC reaches a predetermined level in Ti periodafter power-up, a reset signal RESET is generated, and a power-upsensing signal PUP is enabled due to generation of the reset signalRESET.

Thereafter, the cell plat signal CPL is transited to a high levelaccording to enabling of the power-up sensing signal PUP. Here, thevoltage difference is generated between the cell both end nodes CN1 andCN2 by electric charges stored in the capacitor units FC1˜FC4 of theregister.

In T2 period, when the sufficient voltage difference is generatedbetween the cell both end nodes CN1 and CN2, the pull-down enable signalENN is enabled to a high level and the pull-up enable signal ENP isdisabled to a low level, thereby amplifying the data of the cell bothend nodes CN1 and CN2. The amplified data are an average value of thetwo ferroelectric capacitors connected in parallel.

In T3 period, when data amplification of the cell both end nodes CN1 andCN2 is finished, the power-up sensing signal PUP and the cell platesignal CPL are transited again to a low level. Accordingly, thedestroyed data of the capacitor unit FC1 or FC2 is restored.

Here, the write control signal ENW maintains a low level to prevent anexternal data from being re-written.

FIG. 10 is an operational timing diagram for setting a new data in theregister in a program write operation in accordance with the presentinvention.

When a predetermined time elapses after transmission of a commandsignal, new differential data D and /D are respectively inputted andstored in the capacitor units FC1 and FC2. If each capacitor unit FC orFC2 includes only one ferroelectric capacitor and the ferroelectriccapacitor has a weak state, remanent polarization of the ferroelectriccapacitor is out of a data sensing margin as shown in B of FIG. 3. Inthis case, the register may not store nonvolatile data.

However, when at least two ferroelectric capacitors are connected inparallel as in the present invention, the average remanent polarizationof the capacitors connected in parallel is sensed. Accordingly, even ifany one of the ferroelectric capacitors has a weak state, it can becompensated by the other normal state ferroelectric capacitor.

In the case that the two ferroelectric capacitors have a weak state, theaverage value thereof is too small to store data. However, it has lowpossibility that the two ferroelectric capacitors have a weak state atthe same time. Moreover, when at least three capacitors are connected inparallel, it hardly happens.

When the input data D from a data I/O pad is disabled from a high to lowlevel, a program cycle starts. Therefore, the write control signal ENWfor writing a new data in the register and the cell plate signal CPL aretransited to a high level. Here, the pull-down enable signal ENNmaintains a high level and the pull-up enable signal ENP maintains a lowlevel.

As described above, each of the capacitor units FC1˜FC4 of theferroelectric capacitor unit 430 is formed by connecting the pluralityof ferroelectric capacitors in parallel, to remarkably reduce datastorage failure probability.

FIGS. 11 to 14 are detailed structure diagrams respectively illustratingcapacitor units FC1˜FC4 of a ferroelectric capacitor unit 430 inaccordance with a second embodiment of the present invention.

The first embodiment of the invention has suggested the capacitor unitsformed by connecting the ferroelectric capacitors {circle around(1)}{circle around (2)}, {circle around (3)}{circle around (4)}, {circlearound (5)}{circle around (6)} and {circle around (7)}{circle around(8)} in parallel side by side.

In order to more reduce a layout area, the second embodiment of theinvention provides the capacitor units FC1˜FC4 formed by connecting aplurality of ferroelectric capacitors in parallel in a three-dimensionalstack type.

For example, as shown in the capacitor unit FC1 of FIG. 11, a firstelectrode layer (bottom electrode layer), a first ferroelectric layerand a second electrode layer (top electrode layer) corresponding to theferroelectric capacitor {circle around (1)} are sequentially formed. Asecond ferroelectric layer and a third electrode layer (bottom electrodelayer) corresponding to the ferroelectric capacitor {circle around (2)}are sequentially formed on the second electrode layer. Here, the firstelectrode layer and the third electrode layer corresponding to thebottom electrode layers of the ferroelectric capacitors {circle around(1)} and {circle around (2)} are electrically connected to an outputterminal /B, and the second electrode layer is used as a common topelectrode layer of the two ferroelectric capacitors {circle around (1)}and {circle around (2)}, for receiving a cell plate signal CPL.

That is, the first electrode layer, the first ferroelectric layer andthe second electrode layer compose the capacitor {circle around (1)},and the second ferroelectric layer and the third electrode layer arestacked symmetrically to the first ferroelectric layer and the firstelectrode layer from the second electrode layer used as the common topelectrode layer, to compose the capacitor {circle around (2)}. The thirdelectrode layer is electrically connected to the output terminal /B.

The process for connecting the ferroelectric capacitors in parallel inthe stack type will now be briefly explained.

A contact plug is formed on the bit line B or /B which is an outputterminal, and the first electrode layer, the first ferroelectric layer,the second electrode layer, the second ferroelectric layer and the thirdelectrode layer are sequentially stacked on the contact plug. Here, thefirst and second ferroelectric layers may include at least onedielectric film.

An insulation film is formed on the third electrode layer. A firstcontact hole for opening a predetermined area of the bit line B or /Band a second contact hole for opening a predetermined area of the thirdelectrode layer are formed on the insulation film. A metal process isperformed on the resulting structure, to form a metal line for commonlyconnecting the bit line B or /B to the third electrode layer.

FIG. 12 illustrates the capacitor unit FC2 in accordance with the secondembodiment of the present invention. The capacitor unit FC2 has the samestructure and formation method as the capacitor unit FC1 of FIG. 11.FIGS. 13 and 14 respectively show the capacitor units FC3 and FC4 inaccordance with the second embodiment of the present invention.Differently from the capacitor units FC1 and FC2 of FIGS. 11 and 12, asecond electrode layer (common top electrode layer) is connected to theground voltage terminal VSS.

In the above embodiments, two ferroelectric capacitors are connected inparallel. It is apparent that more ferroelectric capacitors can beconnected in parallel. For example, four capacitors can be formed sideby side or stacked on the same plane, to compose one capacitor unit.

FIGS. 15 a and 15 b are diagrams illustrating four ferroelectriccapacitors connected in parallel.

In FIG. 15 a, the structures of FIG. 11 are double stacked and relatedlayers are electrically connected. More structures of FIG. 11 can bestacked in the same manner as FIG. 15 a so that more ferroelectriccapacitors can be connected in parallel.

In FIG. 15 b, the structures of FIG. 5 are stacked symmetrically in theup/down direction as shown in FIG. 11.

FIG. 16 is a structure diagram illustrating a capacitor unit inaccordance with a third embodiment of the present invention.

Differently from the first and second embodiments, electrode layers areformed in the vertical direction.

That is, a first electrode layer connected to an output terminal /B (orB) is formed in the vertical direction. A first ferroelectric layer anda second electrode layer (capacitor {circle around (1)}) and a secondferroelectric layer and a third electrode layer (capacitor {circlearound (2)}) are respectively formed in the vertical directionsymmetrically from the first electrode layer (common bottom electrodelayer) in the right/left direction.

In the ferroelectric register, a pumping voltage VPP greater than anexternal power voltage VCC is preferably used as a cell plate signalCPL, to stably obtain a sensing margin.

FIG. 17 is a circuit diagram illustrating a cell plate voltage controlunit for increasing the cell plate signal CPL to the pumping voltage VPPlevel in the ferroelectric register in accordance with the presentinvention.

The cell plate voltage control unit includes a delay unit 510, a pumpingunit 520 and a level control unit 530.

The delay unit 510 is comprised of an inverter chain IV1˜IV4 foroutputting a delay signal DLY by non-inversely delaying a cell platecontrol signal CPL_(—)VPP_(—)CON.

When receiving a power voltage control signal VCC_(—)CON, the pumpingunit 520 outputs a pumping voltage VPP level pumping signal by pumpingthe power voltage VCC according to the delay signal DLY from the delayunit 510. The pumping unit 520 includes a NAND gate ND1, a delay unit521, a MOS capacitor C1, a driving unit 522 and a PMOS transistor P5which is a pull-up driving device.

Here, the NAND gate ND1 NANDs the power voltage control signalVCC_(—)CON and the delay signal DLY, and the delay unit 521 includes aninverter chain IV5˜IV7 for inversely delaying the output signal from theNAND gate ND1. The MOS capacitor Cl pumps the voltage level of thepumping signal CPL_(—)VPP precharged to the power voltage VCC levelaccording to enabling of the PMOS transistor P5. The PMOS transistor P5is connected between the power voltage terminal VCC and the outputterminal of the MOS capacitor C1, and has its gate terminal connected toreceive the output signal from the driving unit 522. The driving unit522 includes a PMOS transistor P4 and an NMOS transistor N6 which areconnected in series between the drain terminal of the PMOS transistor P5and the ground voltage terminal VSS, and which have their common gateterminals connected to receive the output signal from the NAND gate ND1.

The level control unit 530 includes inverters IV8 and IV9, a levelshifter 531 and a driving unit 532.

The inverter IV8 inverts the cell plate control signalCPL_(—)VPP_(—)CON, and the inverter IV9 inverts the output signal fromthe inverter IV8.

The level shifter 531 includes PMOS transistors P6 and P7 and NMOStransistors N7 and N8 composing a latch structure, and level-shifts thepumping signal CPL_(—)VPP according to the output state of the invertersIV8 and IV9. In the level shifter 531, the PMOS transistors P6 and P7have their common source terminals connected to receive the pumpingsignal CPL_(—)VPP, and their gate terminals cross-coupled to eachother's drain terminals. The NMOS transistor N7 is connected between thedrain terminal of the PMOS transistor P6 and the ground voltage VSS, andhas its gate terminal connected to receive the output signal from theinverter IV8. The NMOS transistor N8 is connected between the drainterminal of the PMOS transistor P7 and the ground voltage VSS, and hasits gate terminal connected to receive the output signal from theinverter IV9.

The driving unit 532 outputs the cell plate signal CPL by driving thepumping signal CPL_(—)VPP according to the output signal from the levelshifter 531. The driving unit 532 includes a PMOS transistor P8 and anNMOS transistor N9. The PMOS transistor P8 and the NMOS transistor N9are connected in series between the pumping signal terminal CPL_(—)VPPand the ground voltage terminal VSS, and have their gate terminalscommonly connected to receive the output signal from the level shifter531. The PMOS transistor P8 and the NMOS transistor N9 output the cellplate signal CPL through their common drain terminals.

FIG. 18 is a waveform diagram provided to explain an operation of thecell plate voltage control unit.

In order to pump the power voltage VCC in a low voltage area, the powervoltage control signal VCC_(—)CON and the cell plate control signalCPL_(—)VPP_(—)CON are inputted in a high level. In this case, the cellplate control signal CPL_(—)VPP_(—)CON is delayed by the delay unit 510for a predetermined time D, and outputted as the delay signal DLY.

Accordingly, in the delay time D, the power voltage control signalVCC_(—)CON has a high level, the delay signal DLY maintains a low level,and thus the output from the NAND gate ND1 has a high level.

The NMOS transistor N6 of the driving unit 522 is turned on by theoutput from the NAND gate ND1, and thus the PMOS transistor P5 is turnedon, thereby the output terminal of the MOS transistor C1 is prechargedto the power voltage VCC. Therefore, the pumping signal CPL_(—)VPPmaintains the power voltage VCC level according to the output from theMOS capacitor C1.

When the cell plate control signal CPL_(—)VPP_(—)CON has a high level,the NMOS transistor N8 is turned on, and the level shifter 531 outputs alow level signal. Accordingly, the PMOS transistor P8 of the drivingunit 532 is turned on, and the cell plate signal CPL is outputted in thepower voltage VCC level.

After the delay time D elapses, the output DLY from the delay unit 521is enabled to a high level, and the output from the NAND gate ND1 has alow level. Therefore, the PMOS transistor P4 of the driving unit 522 isturned on, and the PMOS transistor PS is turned off. The power voltageVCC is pumped according to the output from the MOS capacitor C1, andthus the pumping signal CPL_(—)VPP is outputted in the pumping voltageVPP level.

Thereafter, when the output from the level shifter 531 has a low level,the PMOS transistor P8 of the driving unit 532 is turned on. Therefore,the cell plate signal CPL is outputted in the pumping voltage VPP levelaccording to the high level pumping signal CPL_(—)VPP.

FIGS. 19 and 20 are timing diagrams in the power-up mode and the programwrite operation of the register in accordance with the presentinvention.

The operations of the register in FIGS. 19 and 20 are identical to FIGS.9 and 10 except that the cell plate voltage CPL is pumped to the pumpingvoltage VPP level by the cell plate voltage control unit, and thusdetailed explanations thereof are omitted.

As discussed earlier, in accordance with the present invention, theferroelectric register improves storage reliability and stability byreducing the data storage failure probability due to the weak statecapacitor, by using the plurality of capacitors connected in parallel,instead of using the single capacitor. Furthermore, the ferroelectricregister obtains the data sensing margin by pumping the cell platesignal into not the power voltage level but the pumping voltage level.

As the present invention may be embodied in several forms withoutdeparting from the spirit or essential characteristics thereof, itshould also be understood that the above-described embodiments are notlimited by any of the details of the foregoing description, unlessotherwise specified, but rather should be construed broadly within itsspirit and scope as defined in the appended claims, and therefore allchanges and modifications that fall within the metes and bounds of theclaims, or equivalences of such metes and bounds are therefore intendedto be embraced by the appended claims.

1. A ferroelectric register, comprising: a pull-up switch for outputtinga power voltage when a pull-up enable signal is activated; a pull-updriving unit for receiving the power voltage from the pull-up switch,and for pulling up a voltage of a data storage node to the powervoltage; a write enable control unit for transmitting a differentialdata to the data storage node according to a write control signal; aferroelectric capacitor unit including at least two ferroelectriccapacitors connected in parallel between the data storage node and aplate line, and storing the differential data when a cell plate signalis activated; a pull-down switch for transmitting a ground voltage tothe data storage node when a pull-down enable signal is activated; and apull-down driving unit for receiving the ground voltage from thepull-down switch, and for pulling down the voltage of the data storagenode to the ground voltage.
 2. The ferroelectric register of claim 1,wherein, in the ferroelectric capacitor unit, at least two ferroelectriccapacitors share the same ferroelectric layer on the same plane.
 3. Theferroelectric register of claim 1, wherein, in the ferroelectriccapacitor unit, at least two ferroelectric capacitors are formed bystacking ferroelectric layers symmetrically upon and beneath a commonelectrode layer.
 4. The ferroelectric register of claim 1, wherein, inthe ferroelectric capacitor unit, at least two ferroelectric capacitorsare connected in parallel between the data storage node and the groundvoltage.
 5. The ferroelectric register of claim 1, further comprising acell plate voltage control unit for pumping the cell plate signal from apower voltage level to a pumping voltage level according to a cell platecontrol signal and a power voltage control signal.
 6. The ferroelectricregister of claim 5, wherein the cell plate voltage control unitcomprises: a delay unit for outputting a delay signal by delaying thecell plate control signal for a predetermined time; a pumping unit foroutputting a pumping signal by pumping the power voltage to a pumpingvoltage level according to the delay signal, when receiving the powervoltage control signal; and a level control unit for outputting thepumped cell plate signal by level-shifting the pumping signal and thecell plate control signal.
 7. The ferroelectric register of claim 5,wherein, in the ferroelectric capacitor unit, at least two ferroelectriccapacitors are connected in parallel between the data storage node andthe ground voltage.
 8. The ferroelectric register of claim 5, wherein,in the ferroelectric capacitor unit, at least two ferroelectriccapacitors share the same ferroelectric layer on the same plane.
 9. Theferroelectric register of claim 5, wherein, in the ferroelectriccapacitor unit, at least two ferroelectric capacitors are stackedsymmetrically upon and beneath a common electrode layer.